Influence Of Temperature On Auger Recombination Lifetime In In1-Xgaxas Materials

The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In1-xGaxAs materials is investigated through the simulation, assuming the concentrations of electrons and holes are 1017 cm(-3) and 10(18) cm(-3), respectively. The results show that the temperature has little influence on Auger recombination lifetime of In1-xGaxAs materials at x<0.3. However, it has a great impact when x>0.3 and the effect is more obvious at a lower temperature. Moreover, Auger recombination lifetime of p-type In1-xGaxAs is longer than that of n-type In1-xGaxAs with the same temperature, Ga composition and carriers concentration.