Crystallization and electrical conversion behavior of Ge1Sb9/HfO2 superlattice-like phase change films

•GeSb/HfO2 superlattice-like films were prepared by magnetron sputtering.•The thermal stability of GeSb/HfO2 is greatly improved.•Under the influence of HfO2, the grain size of the film decreases to 3.34 nm.•The density of the film decreased to 4.27% before and after phase transition.•The energy required for RESET operation of Ge1Sb9/HfO2 superlattice-like film is low.