Low-Voltage Linear Bootstrapped Sampling Switch With A-Ingazno Tfts

This letter presents a novel linear bootstrapped sampling switch using amorphous indium-gallium-zinc-oxide thin-film transistors, which is designed using all enhancement n-type transistors. The switch is simulated at a low supply voltage and a small transistor channel length of 2V and 2 mu m, respectively. The simulation results across the process corners have shown a maximum variation of 2.2% in the on-resistance of the switch. Moreover, the worst-case signal to-noise-and-distortion-ratio, spurious-free-dynamic-range, and total-harmonic-distortion across the process corners have been observed as 66, 70 and -68dB, respectively, at a sampling frequency of 50 kHz. This circuit finds potential applications in implementing an analogue-to-digital converter with oxide thin-film transistors technology, which is an essential block in flexible sensing systems.