1st Results From Gaas Double-Sided Detectors

Sp Beaumont, R Bertin,Cn Booth, C Buttar, L Carraresi,F Cindolo,M Colocci, Fh Combley, S Dauria, C Delpapa, M Dogru, M Edwards, F Foster, A Francescato, S Gowdy, R Gray, G Hill, Y Hou, P Houston, G Hughes,Bk Jones,Jg Lynch, B Lisowski, J Matheson,F Nava, M Nuti, V Oshea,Pg Pelfer, C Raine, J Santana, Ij Saunders, Ph Seller, K Shankar, Ph Hsarp,Io Skillicorn, T Sloan,Km Smith, I Tenhave,Rm Turnbull, U Vanni, A Zichichi

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT（1994）

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摘要

Preliminary results are presented on the performance of double-sided microstrip detectors using Schottky contacts on both sides of a semi-insulating (SI) GaAs substrate wafer, after exposure to 10(14) neutrons cm-2 at the ISIS facility. A qualitative explanation of the device behaviour is given.

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