P-N Junction On High-Pressure-High-Temperature Grown Single Crystal Diamond: Uv-Emission Spectra And Electrical Properties

Semiconductor p+-p-n structure has been created on synthetic single crystal IIb type diamond grown by high pressure temperature gradient method and doped with boron at growth process. 250 mu m thick (001) cut plate was ion implanted by B, As and P at (1 - 1.3).10(16) cm(-2). Electroluminescence spectra were investigated at different values of electrical voltage and current in regular and S-part of the current-voltage characteristics. Strong exciton recombination emission was observed at the current density up to 60 A*cm(-2). The spectrum transforms at transition from regular conductivity to electrical avalanche breakdown regime. Simultaneously a set of sharp EL lines appears in the range of 327-652 nm on the A-band background. They tentatively attributed to superlumenscence effect.