Electron Mobility And Concentration On Submicrometer Scale - Investigation Of Si And Algan/Gan

M. Sakowicz,J. Lusakowski, K. Karpierz, M. Grynberg,B. Majkusiak, R. Tauk,A. Tiberj,W. Knap, Z. Bougrioua, M. Azize, P. Lorenzini, F. Boeuf,T. Skotnicki

PHYSICS OF SEMICONDUCTORS, PTS A AND B（2007）

引用 0|浏览0

暂无评分

摘要

Alternative current magnetoresistance (AC MR) method was applied to Si MOSFETs and AlGaN/GaN HEMTs at 4.2 K and 300 K. We show that the AC MR method allows to locally determine the quantum and transport relaxation times under the gate of micrometer and submicometer transistors.

查看译文

关键词

field effect transistors, magnetoresistance, mobility

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要