The Effect Of Crystallinity Of P Window Layers On The Structural And Electrical Properties Of Intrinsic Mu C-Si:H And Superstrate Solar Cells

Effects of crystallinity of the p window layers in the pin solar cells having hydrogenated microcrystalline silicon (mu c-Si:H) films as an absorber layer on solar cell performance are investigated through the evaluation of the photovoltaic characteristics of solar cells prepared by varying the gas ratio of SiH4 /H-2 during the p layer deposition. By Raman scattering spectroscopy analysis, it is observed that the volume fraction of crystalline/amorphous phases (X-c) of p layers decreases from 31.0% to 5.1% with increasing the SiH4 concentration from 0.2 to 1.0 sccm at fixed H-2 of 180 sccm. Depending on the X-c of the p layers, the solar cell performance is affected significantly, where the solar cells with the p window layers of low X-c represent good photovoltaic characteristics, namely high open circuit voltage (V-oc) and short circuit current density (J(sc)). Some experimental results and discussion about relationship between crystalline structure of p layers and performance of mu c-Si:H solar cells will be presented briefly in this paper.