The Transferring Technique Development Of Pzt Thick Film From Silicon To Flexible Substrates

For piezoelectric sensors, the usage of flexible substrates can achieve better performance with higher strain comparing to using rigid substrates. However, most of flexible substrates are plastic based materials which cannot be sustained under high temperature greater than 300 degrees C during the sintering or annealing process which will up to more than 800 degrees C in the fabrication process. Moreover, the cracks are easily formed during transferring when the thickness of PZT film is larger than 10 mu m. Although, there are transferring technique in flexible electronics process such as epitaxial lift-off (ELO) and water-assisted transfer printing (WTP) developed by other groups, but the target film should be soaked into the etchant or other solvent to achieve transferring which may affect the performance of PZT film. Nowadays, there still have no suitable method to transferring the PZT thick film with standardized process. In this research, we modify and improve the transferring technique by adding sacrificial metal layer without solvent-assisted that the thick PZT film deposited by screen-printing method can be transferred to flexible substrates successfully. Also, the PZT film by screen-printing method can achieve greater than 10 mu m thickness without cracks before and after transferred. Finally, the transferring technique used for batched thick PZT film deposited by screen-printing method is proved by simple piezoelectric cantilever output performance characterization.