Omega Fets Transistors With Tin Metal Gate And Hfo2 Down To 10nm

For the first time, TiN metal gate and high K gate dielectric (HfO2) have been successfully integrated on non planar Omega FETs transistors, with gate lengths down to 10nm. NMOS transistors exhibit an excellent I-ON/I-OFF ratio of 5. 10(5), the best value ever reported for a 10nm non planar device. The use of HfO2 reduces the gate leakage current by several orders of magnitude, for EOT of 1.92nm. Very low off-currents are measured with high on-currents, demonstrating the interest of such devices for low power applications.