Next Generation 1200v, 3.5m Omega.Cm(2) Sic Planar Gate Mosfet With Excellent Htrb Reliability

In this paper, we report on 1200V SiC planar gate MOSFETs with an improved tradeoff between on-resistance and reverse bias gate oxide electric field. The improved tradeoff was obtained by optimizing the JFET doping profile and unit cell design. These MOSFETs showed a specific on-resistance of 3.5mOhm.cm(2) at room temperature, increasing to 5.9mOhm.cm(2) at 175 degrees C, along with excellent High Temperature Reverse Bias (HTRB) reliability as shown by no failures after stressing at 1440V, 175 degrees C for 1000hours.