Real-Time Edge Enhancement Using Knsbn At 633-Nm
CHINESE PHYSICS LETTERS（1991）
摘要
Edge enhancement has been performed in Ce-doped (K0.5Na0.5)2y (Sr0.61 Ba0.39)1-yNb2O6 (KNSBN) crystal at 633 nm with low incident-light intensities (10(-3) W/cm2). We calculated the expected images which show good agreement with the images that we have experimentally observed.
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