2.2 Mu M Ingaassb/Algaassb Laser Diode Under Continuous Wave Operating At Room Temperature

2.2 mu m InGaAsSb/AlGaAsSb Sb-based type-I laser diodes (LDs) were fabricated, with cavity lengths of 1000 mu m and stripe width of 150 mu m. The high output performance was achieved with the threshold current density of the device is as low as 187 A/cm(2), slope efficiency of 0.2 W/A, and vertical and parallel divergent angles I(aSyen) = 42A degrees and I(|) = 10A degrees, respectively. The continuous wave operating up to 320 mW at room temperature (RT) were achieved.