Growth Of Semi-Polar (1-101) Ingan/Gan Mqw Structures On Off 8 Degrees Off -Axis (100) Patterned Si Substrate By Movpe

In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-101) GaN facet on 8-degree off oriented stripe patterned (100) Si substrates by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on NH3 flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of NH3 flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 rim depend on the growth conditions.