High-Resolution Xrd Analysis And Device Characteristics Of Inas/Gasb Strained-Layer Super Lattice Photodetector

Type-II InAs/GaSb (818-ML) strained-layer superlattice (SLS) were grown, and analyzed by high-resolution x-ray diffraction (XRD). The satellite peaks of XRD show a strain transition from compressive to tensile. The responsivity of discrete SLS photodetectors (P=150) shows a cutoff wavelength of similar to 5 mu m, and the temperature dependence gives an activation energy of 275 meV corresponding to the transition energy of HH1-CB.