Design And Fabrication Of 1.2kv/40m Omega 4h-Sic Mosfet

A 4H-SiC MOSFET with breakdown voltage higher than 1200V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of DMOSFET. The n-type epilayer is 10 mu m thick with a doping of 1 x10(16) cm(-3). The devices were fabricated with a floating guard ring edge termination The drain current I-d = 20 A at V-g = 20 V, corresponding to V-d <= 1.6 V.