Extended Wavelength Ingaas Swir Fpas With High Performance

The extended InGaAs short wavelength infrared (SWIR) detector covers 1.0-2.5 mu m wavelength, which plays an important role in weather forecast, resource observation, low light level systems, and astronomical observation and so on. In order to fabricate the high performance extended InGaAs detector, materials structure and parameters were characterized with Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM), the spreading of minority carriers and lattice quality were obtained. Mesa etching process, etching damage restoration technique and low temperature passivation technique were used in the fabrication of the extended InGaAs detector. The improvement of material structure and device process was studied by fabricating and measuring different perimeter-to-area (P/A) photodiodes and singledevice, respectively. The dark current density of the extended InGaAs detector obviously was reduced, about 2 nA/cm(2) at 170 K. The 512x256 FPAs were fabricated, the peak detectivity and the quantum efficiency of which are 5x1011 cmHz(1/2)/W and 80%, respectively. The staring image yielded of the 512x256 FPAs is shown, which demonstrates very good imaging quality.