Observation Of Precursor Control Over Film Stoichiometry During The Chemical Vapor Deposition Of Amorphous Ti(X)Si(1-X)O(2) Films

Observation of Precursor Control over Film Stoichiometry during the Chemical Vapor Deposition of Amorphous Ti(x)Si(1-x)O(2) FilmsAmorphous thin films of composition Ti(x)Si(1-x)O(2) have been grown by low-pressure vapor deposition on silicon (100) substrates using Si(OEt)(4) and either Ti(O(i)Pr)(4) or anhydrous Ti(NO(3))(4) as the sources of SiO(2) and TiO(2), respectively. RES revealed that x (from the formula Ti(x)Si(1-x)O(2)) was dependent upon the choice of TiOz precursor. For films grown using TTIP-TEOXx could be varied by systematic variation of the flow of Nz through the precursor vessels or the deposition temperature. For the case of TN-TEOS x remained close to 0.5. The results suggested the existence of a specific chemical reaction between TN and TEOS prior to film deposition.