Epitaxial Growth Of Tin On Al2o3 At Cryogenic Temperature
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS（2003）
摘要
Epitaxial growth of a titanium nitride film on sapphire is achieved at the temperature of liquid nitrogen by means of reactive sputtering. The quality of epitaxy has been thoroughly studied by X-ray pole figure analysis. The full-width at half maximum (FWHM) from the X-ray rocking curve of 0.66degrees (2376 arcsec) is exceptionally low for the film grown at -200degreesC with a thickness of 50 nM.
更多查看译文
关键词
reactive magnetron sputtering, titanium nitride, heteroepitaxy, pole figure, lattice mismatch, cryogenic temperature
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要