High-Energy Terahertz Pulses From Semiconductors Pumped Above The Three-Photon Absorption Edge

Gy. Polonyi, B. Monoszlai, G. Andriukaitis, G. Gaumann, T. Balciunas, A. Pugzlys, A. Baltuska,T. Feurer, J. Hebling,J. A. Fulop

2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2016）

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摘要

THz generation scalable to high energies in ZnTe and GaP by tilted pulse front pumping at 1.45 and 1.7 mu m wavelength was demonstrated. Up to 0.7% efficiency and 14 mu J energy were achieved.

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关键词

tilted pulse front pumping,THz generation,three-photon absorption edge,semiconductors,high-energy terahertz pulses,wavelength 1.45 mum,wavelength 1.7 mum,ZnTe,GaP

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