Mobility Characterization Of P-Type And N-Type Strained Si1-X-Ygexcy/Si Epilayer Hall Devices

Mobilities in Si1-x-yGexCy layers were measured using mesa etched Van der Pauw structures for alloy layers with 0 < x < 0.30 and 0 < y < 0.02 and doping levels of 10(15) < N < 10(18) cm(-3). Mobilities in Si1-x-yGexCy layers with x = 0.27 were found to approach Si mobilities for both mu(n) and mu(p). While electron mobilities in phosphorous-doped SiGeC decrease with doping concentration, hole mobilities in boron-doped SiGeC increase with doping level, indicating ionized impurity scattering is not dominant for mu(p) over the temperature range studied.