Time-Resolved Photoluminescence Spectra Of Ingan Epilayer

InGaN epitaxial layer has been studied by means of temperature dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL). The PL peak energy was fitted by a thermal activation and thermal transfer model, and a fast carriers transfer time was obtained. A small redshift as decay time increases was observed at low temperature in the TRPL spectra, and the redshift was enhancing with increasing temperature. These behaviors are caused by a change in the carrier dynamics with increasing temperature due to the carriers transferring in the localized states in InGaN eplayer.