22FDX (R) fMAX Optimization through Parasitics Reduction and GM Boost

Zhixing Zhao,Steffen Lehmann,Luca Lucci,Yogadissen Andee,Alexis Divay,Luca Pirro,Tom Herrmann,Alban Zaka,Ricardo Sousa,Patrick James Artz,Klaus Hempel,Juergen Faul,Tianbing Chen,Richard Taylor,Jerome Mazurier,Carsten Grass,Jan Hoentschel,David Harame

49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019)（2019）

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摘要

This paper proposes three methods of reducing device gate resistance and parasitic capacitance while boosting transconductance of MOSFET on 22FDX (R). The f(MAX) can be improved by 50% and up to 75% for NFET and PFET with respect to a standard 2.0 mu m finger width layout, respectively.

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关键词

RF, FDSOI, FMAXFT, GATE RESISTANCE REDUCTION, PARASITIC CAPACITANCE REDUCTION

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