Solid Phase Crystallized Polycrystalline Silicon Thin Film Transistors Using Atomic Layer Deposited Aluminum Oxide As Gate Dielectric

Solid phase crystallized (SPC) polycrystalline silicon (poly-Si) thin film transistors (TFTs) were fabricated using atomic layer deposited aluminum oxide as gate dielectric. Compared with that of devices fabricated using conventional low pressure chemical vapor deposited SiO2 as gate dielectric, the threshold voltage and sub-threshold slope of SPC poly-Si TFTs with aluminum oxide gate dielectric were greatly improved with very high uniformity.