Ganhfet For W-Band Power Applications

In this paper we report high frequency GaN power device and measured power performance of the first W-band (75 GHz-1 10 GHz) MMIC fabricated in GaN material system. The first W-band GaN MMIC with 150 pm of output gate periphery produces 316 mW of continuous wave output power (Power density = 2.1 W/m) at a frequency of 80.5 GRz and has associated power gain of 17.5 dB. By comparison the reported (1) state of the art for other solid state technologies in W-band is 427 mW measured in a pulsed mode on an InP HEMT MMIC with 1600 mu m of output periphery (Power density = 0.26 W/mm). The reported result demonstrates tremendous superiority of GaN device technology for power applications at frequencies greater than 75 GHz.