Comparison of nMOSFET Structures for Millimeter-Wave Frequencies in 0.18-μm CMOS technology
2020 IEEE 33RD INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS)(2020)
摘要
We present two nMOSFET structures with the high maximum oscillation frequency (f
max
) in 1P5M 0.18-$\mu$m CMOS technology to use it for millimeter-wave applications. One is a compact-type structure, and another is a round-table-type structure. By reducing their parasitics, we achieve the f
max
of 95 GHz, which is approximately 2 times or more compared to that of the conventional structure. It is shown that the f
max
of the round-table-type structure is approximately 10 GHz higher than that of the compact-type structure.
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关键词
nMOSFET structures,1P5M CMOS technology,high maximum oscillation frequency,millimeter-wave applications,compact-type structure,round-table-type structure,millimeter-wave frequencies,parasitic reduction,frequency 95.0 GHz,size 0.18 mum
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