3d Vertical Taox/Tio2 Rram With Over 10(3) Self-Rectifying Ratio And Sub-Mu A Operating Current

Chung-Wei Hsu,Chia-Chen Wan,I-Ting Wang,Mei-Chin Chen,Chun-Li Lo,Yao-Jen Lee,Wen-Yueh Jang,Chen-Hsi Lin,Tuo-Hung Hou

2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2013）

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摘要

The 3D double-layer vertical RRAM with ultralow sub-mu A operating current and high self-rectifying ratio over 10(3) has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.

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