Graphene-Inse-Graphene Van Der Waals Heterostructures

S. A. Svatek,G. W. Mudd,Z. R. Kudrynskyi,O. Makarovsky,Z. D. Kovalyuk, C. J. Mellor, L. Eaves,P. H. Beton,A. Patane

19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19)（2015）

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摘要

We exploit the broad-band transparency of graphene and the favorable energy band line-up of graphene with n-type InSe thin films to create graphene-InSe-graphene heterostructures with high photosensitivity at room temperature. We use a semiclassical model to describe the photoresponse and its dependence on the electron transit time through the InSe layer.

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