Improvement Of Interfacial And Electrical Properties Of Al2o3/N-Ga0.47in0.53as For Iii-V Impact Ionization Mosfets

In this work, Metal Oxide Semiconductor Capacitors (MOSCaps) based on Al2O3/ n-Ga0.47In0.53As interface have been studied. In order to have high MOSFETs performance, it is necessary to improve the semiconductor oxide interface quality. It is observed that the (NH4)(2)S passivation shows lower interface trap density in the order of 6x10(11)cm(-2).eV(-1). Also, it is observed that O-2 plasma densification after a passivation in a NH4OH solution improves the electrical behaviour of the charge control. Low interface trap density in the order of 1 x 10(12)cm(-2).eV(-1) was obtained for different treatments presented in this work.