Ge0.9sn0.1 P-I-N Photodiode With Record-High Responsivity At Two-Micron-Wavelength

Shengqiang Xu,Yi-Chiau Huang,Wei Wang,Yuan Dong,Saeid Masudy-Panah,Xin Guo,Hong Wang,Xiao Gong,Yee-Chia Yeo

2018 IEEE 15TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP)（2018）

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摘要

We demonstrate a Ge0.9Sn0.1 photodiode on Si substrate with record-high responsivity R-op of 0.17 A/W at wavelength lambda of 2 mu m. Fourier-transform infrared spectroscopy (FTIR) reveals that the detector has a cutoff wavelength lambda(c) at similar to 2.6 mu m.

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关键词

GeSn, photodiode, CVD, SWIR

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