How We Are Making The 0.5-Na Berkeley Micro-Field Exposure Tool Stable And Productive

Chris Anderson,Arnaud Allezy,Weilun Chao, Lucas Conley, Carl Cork, Will Cork, Rene Delano, Jason Deponte,Michael Dickinson, Geoff Gaines, Jeff Gamsby,Eric Gullikson, Gideon Jones, Lauren Mcquade,Ryan Miyakawa,Patrick Naulleau, Seno Rekawa,Farhad Salmassi, Brandon Vollmer, Daniel Zehma, Wenhua Zhua

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY XI(2020)

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摘要
Vibration levels in MET5 exposures were reduced from 1.5 nm RMS to 0.8 nm RMS by tuning the vibration isolation system and removing non-compliant hardware. Frequency doubling exposures were improved by replacing the Fourier-synthesis pupil scanner mirror. Focus-exposure-matrix outliers have been solved by patching a bug in the control software. 9 nm half-pitch lines and 8 nm half-pitch lines were printed in 11 nm thick MOx resist.
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关键词
EUV, High-NA, MET, Microfield Exposure Tool, Photoresist, Berkeley Lab, LBNL, CXRO
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