Chemical Deposited Pd On Gaas

The chemical deposition of palladium on n and p-GaAs from an aqueous solution of PdCl2, in strong acid medium can be an alternative technique for contacts on GaAs. This paper presents the variations of palladium films thickness (measured by an interferometric method) as a function of solution concentration, reaction time and substrate conductivity. There are presented data concerning the adhesion of palladium films (measured by a mechanical method) related to the film thickness. From a comparative study concerning the adhesion of evaporated films such as: Au/n-GaAs, Ag/n-GaAs, AnGe/n-GaAs and Pd/n-GaAs, it results the conclusion that the adhesion of palladium films are of the same order of magnitude as the metallic films evaporated without an annealing procedure.