Degradation Behaviors in InAs Quantum Dot Lasers on Silicon using Misfit Dislocation Trapping Layers
2021 IEEE Photonics Conference (IPC)(2021)
摘要
InAs quantum dot lasers on silicon using misfit dislocation trapping layers show 400-fold improvement in lifetime at 80°C (failure criterion: 50% initial peak power). Trapped misfit segments show no evidence of recombination enhanced dislocation climb, leading to an order of magnitude reduction in its extent.
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关键词
epitaxial III-V/Si integration,quantum dot lasers,dislocation filtering
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