Fabrication and Characterization of GaN/Diamond bonding interface

A. Kobayashi,Y. Shimizu,Y. Ohno, S. W. Kim,K. Koyama,M. Kasu,Y. Nagai,N. Shigekawa,J. Liang

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)（2021）

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摘要

Direct bonding of diamond and GaN is successfully fabricated by surface activated bonding method. An 80% contact area of diamond and GaN is obtained. The effect of annealing temperature on the structure properties of the bonding interface is investigated under in-situ annealing in a transmission electron microscope (TEM).

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