Program charge interference and mitigation in vertically scaled single and multiple-channel 3D NAND flash memory

D. Verreck,A. Arreghini,G. Van den Bosch,A. Furnémont, M. Rosmeulen

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)（2021）

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摘要

Vertical pitch scaling and channel splitting are under active research to increase bit density in 3D NAND flash memories. Here, we use 3D TCAD simulations to investigate the associated program charge interference from neighboring cells, both in single and multiple channel configurations. We find that interference-induced threshold voltage shifts increase significantly at scaled gate lengths and in...

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关键词

Solid modeling,Three-dimensional displays,Atmospheric modeling,Interference,Logic gates,Split gate flash memory cells,Threshold voltage

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