TCAD Comprehensive Silicon Strain Model Using Finite Element Quasi-Fermi Discretization

Thomas Weingartner,Mark E. Law,Keith Green,Andrew Thomas, Henry Johnson,Polina Leger

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)（2021）

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摘要

In this work we present a finite element quasi-Fermi implementation of a generalized first principles strain model for silicon. Strain effects in silicon are often modeled with separate mobility, bandgap, density of states, piezo-Hall, temperature, and doping models. The current work encompasses these effects by utilizing first principles and the finite element quasi-Fermi method to write a conduc...

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关键词

Temperature dependence,Solid modeling,Three-dimensional displays,Tensors,Doping,Silicon,Semiconductor process modeling

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