Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

A. Jay,A. Hémeryck,F. Cristiano,D. Rideau,P.L. Julliard,V. Goiffon, A. LeRoch,N. Richard, L. Martin Samos,S. De Gironcoli

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)（2021）

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摘要

The origin of the random telegraph signal (RTS) observed in semiconductors-based electronic devices is still subject to debates. In this work, by means of atomistic simulations, typical clusters of defects as could be obtained after irradiation or implantation are studied as a possible cause for RTS. It is shown that:(i)a cluster of defects is highly metastable,(ii)it introduces several electronic...

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关键词

Atomic measurements,Semiconductor device measurement,Radiation effects,Discrete Fourier transforms,Modulation,Switches,Time measurement

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