A Low-Voltage 6T Dual-Port Configured SRAM with Wordline Boost in 28 nm FD-SOI

A 32 Kb dual-port low-voltage SRAM in 28 nm FD-SOI, featuring foundry supplied high-density 6T bitcells, is presented. Dual-port configurability is realized by a unique dual-rail architecture, utilizing boost techniques that guarantee reliable operation in low-voltage. The area cost of the array is 62% lower, compared to widely used 8T two-port or dual-port SRAM arrays. The SRAM reliably operates in the low-voltage regime, and an access rate of 1MHz is measured at V MIN of 0.29 V. The highest energy efficiency of 1.35 fJ/bit-access is obtained at 80 MHz access rate, at a V DD of 0.54 V.