Temperature Influence on the Electrical Properties of Vertically Stacked Nanowire MOSFETs

Jaime C. Rodrigues,Genaro Mariniello,Mikael Cassé,Sylvain Barraud,Maud Vinet,Olivier Faynot,Marcelo A. Pavanello

2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)（2021）

引用 2|浏览14

暂无评分

摘要

This paper aims at analyzing the electrical characteristics of 2-level Stacked Nanowire MOSFETs at low temperatures. Fundamental device parameters such as threshold voltage, subthreshold slope and transconductance are evaluated in the temperature range of 160K to 400K. The influence of fin width variation is also studied. An analytical model of multiple-gate nanowire MOSFETs is employed to explain...

查看译文

关键词

Stacked Nanowires,Low temperature,Electrical characterization,transcondutance,threshold voltage,subthreshold slope,Multigate transistors

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要