Enhancing the Hydrogen-Sensing Performance of p-Type PdO by Modulating the Conduction Model

The implementation of the p-type metal oxide semiconductor (MOS) in modern sensing systems requires a strategy to effectively enhance its inherent low response. However, for p-type MOS sensors, conventional methods such as catalyst nanoparticle (NP) decoration and grain size regulation do not work as effectively as they do for n-type MOS sensors, which is basically due to the fact that the p-type MOS adopts an unfavorable parallel conduction model. Herein, taking Au@PdO as an example, we demonstrate that the conduction model of the p-type MOS can be manipulated into the series conduction model by inserting a high-conductive metallic core into less-conductive p-type MOS NPs. This unique series conduction model makes the sensor response of Au@PdO nanoparticle arrays (NAs) very sensitive to the catalyst NP decoration as well as the change of structural parameters. For example, Au@PdO NAs demonstrate an similar to 9000 times increase in sensor response when decorated with Pd NPs, whereas there is only similar to 100 times increase for PdO NAs. This greatly improved response value outperforms all previously reported PdO-based (and most other p-type semiconductor-based) H-2 sensors, which helps the obtained sensor to achieve an ultralow detection limit of similar to 0.1 ppm at room temperature. Additionally, Au@PdO NAs inherit the high surface reactivity and gas adsorption property of p-type PdO. As a result, the as-prepared sensor exhibits high humidity-resistive property and excellent selectivity. This work provides a new strategy to significantly enhance the sensing performance of p-type gas sensors by manipulating their conduction model.