GaAs-Based p-i-n Narrow Bandpass 850 nm IR Photodetector With a p-AlGaAs Filter Layer

Chun-Kai Wang,Yu-Zung Chiou, Yi-Lo Huang

IEEE Sensors Journal（2021）

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摘要

GaAs-based p-i-n 850 nm infrared photodetectors with a narrow bandpass characteristic were successfully fabricated and demonstrated by epitaxial growth technology. The photo to dark current ratios of the fabricated PDs were $1.76\times10$ 7 and $2.08\times10$ 更多

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关键词

PIN photodiodes,Band-pass filters,Gallium arsenide,Dark current,Current measurement,Semiconductor device measurement,Photonics

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