Experiments of a Lateral Power Device With Complementary Homogenization Field Structure

Wentong Zhang, Yang Wu,Ke Zhang,Ming Qiao,Sen Zhang,Nailong He,Zhili Zhang,Zhaoji Li,Bo Zhang

IEEE Electron Device Letters（2021）

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摘要

A lateral power device with complementary homogenization field structure (C-HOF) is proposed and experimentally proved in this letter. The C-HOF is formed by introducing a P-type metal insulator semiconductor (P-MIS) on the N-MIS. The complementary P/N-MIS and the PN junction between them ensure the homogenized field ${E}_{\text {hof}}$ 更多

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关键词

Doping,Electric fields,Electric breakdown,Junctions,Breakdown voltage,Electrodes,Semiconductor process modeling

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