Mid Wavelength Type II InAs/GaSb Superlattice Avalanche Photodiode With AlAsSb Multiplication Layer

We report on a mid wavelength avalanche photodiode (APD) device with a separate absorption and multiplication structure. Type II InAs/GaSb superlattices are used as the absorber and lattice-matched high bandgap AlAsSb material is used as the multiplication layer. A reference p-i-n device that has the same absorption layer as that of the APD is also fabricated for comparison. Signi...