A Physically Transient Self-Rectifying and Analogue Switching Memristor Synapse

Jiaxin Lv,Saisai Wang,Fanfan Li,Qi Liang,Mei Yang,Xiaohua Ma,Hong Wang,Yue Hao

IEEE Electron Device Letters（2021）

引用 13|浏览9

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摘要

A physical transient memristor synapse with self-rectifying and analogue switching behaviors based on Mo/MgO/AZO (Al2O3 2 wt %, ZnO 98 wt %)/W is presented. By modulating thickness of MgO layer, the device with 5 nm MgO insulator layer shows stable resistive switching memory with a rectification ratio up to 102, and precise tuning synaptic functions. Meanwhile, the...

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关键词

Memristors,Transient analysis,Switches,Synapses,Performance evaluation,Electrodes,Water

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