Atomic/molecular layer deposition of Ni-terephthalate thin films

Atomic/molecular layer deposition (ALD/MLD) is currently strongly emerging as an intriguing route for novel metal-organic thin-film materials. This approach already covers a variety of metal and organic components, and potential applications related to e.g. sustainable energy technologies. Among the 3d metal components, nickel has remained unexplored so far. Here we report a robust and efficient ALD/MLD process for the growth of high-quality nickel terephthalate thin films. The films are deposited from Ni(thd)(2) (thd: 2,2,6,6-tetramethyl-3,5-heptanedionate) and terephthalic acid (1,4-benzenedicarboxylic acid) precursors in the temperature range of 180-280 degrees C, with appreciably high growth rates up to 2.3 angstrom per cycle at 200 degrees C. The films are amorphous but the local structure and chemical state of the films are addressed based on XRR, FTIR and RIXS techniques.