Industrial TCAD: Modeling Atoms to Chips
IEEE Transactions on Electron Devices(2021)
摘要
The objective of this work is to briefly illustrate the breadth of problems industrial technology computer aided design (TCAD) departments are expected to address when supporting modern semiconductor process development, focusing on two important trends. The first is the incredible expansion of the simulation domain both downward to atomic dimensions and upward to the very large-scale die-level si...
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关键词
Computational modeling,Semiconductor process modeling,Scattering,Germanium,Transistors,Nanoscale devices,Tools
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