Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET with Low-Permittivity Inner Spacers
IEEE transactions on electron devices/IEEE transactions on electron devices（2021）
关键词
FinFET,gate-all-around (GAA),inner spacer,inserted-oxide (i-oxide) FinFET (iFinFET),i-oxide,multi-bridge channel FET (MBCFET),nanosheet (NS),nanowire (NW),NS field-effect transistor (NSFET)
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