Operational Transconductance Amplifier Design with Gate-All-Around Nanosheet MOSFET using Experimental Lookup Table Approach

Júlia C. S. Sousa,Welder F. Perina,Eddy Simoen,Anabela Veloso,Joao A. Martino,Paula G. D. Agopian

2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)（2021）

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摘要

This paper presents the design of an Operational Transconductance Amplifier (OTA) with Gate-All-Around Nanosheet MOSFETs (GAA-NSH). The circuit simulation was performed using an experimental Lookup Table (LUT) approach. The experimental drain current and gate capacitance were extracted and used in a Verilog-A model in order to design the OTA for different transistor efficiency (gm/ID) values. The ...

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关键词

TFETs,Power demand,Voltage,Bandwidth,Logic gates,FinFETs,Nanoscale devices

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