Si/Si0.7Ge0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications

J. Lacord,F. Tcheme Wakam,Z. Chalupa,J.-M. Hartmann,P. Besson,V. Loup,C. Vizioz,L. Brevard,F. Aussenac,X. Mescot,K. Lee,M. Bawedin

2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)（2022）

引用 0|浏览21

暂无评分

摘要

•A2RAM devices are fabricated using an adaptation of Si-Nanowire process flow.•They include a Si-SiGe heterostructure to improve memory performance.•Even the device structure is not exactly what we expect, we succeed to evidence 1T-DRAM programming.

查看译文

关键词

1T-DRAM,A2RAM,Electrical characterization

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要