Analysis of Ion-Induced SEFI and SEL Phenomena in 90 nm NOR Flash Memory

Anan Ju,Hongxia Guo,Lili Ding,Fengqi Zhang,Xiangli Zhong,Xiaoyu Pan,Hong Zhang,Jinshun Bi

IEEE Transactions on Nuclear Science（2021）

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摘要

This article mainly focuses on the single event function interruption (SEFI) and single event latch-up (SEL) of 90 nm NOR flash memories. Devices were irradiated by ions with different linear energy transfer (LET) values from 12.9 to $65.8~MeV\cdot cm^{2}$ /mg. SEFI observed in the device is further divided into bit SEFI, colu...

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关键词

Ions,Flash memories,Transient analysis,Radiation effects,Performance evaluation,Single event upsets,Nonvolatile memory

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