A 28/39 GHz Dual-Band Power Amplifier Using Optimal Matching Contour in GaAs pHEMT
2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)（2021）
摘要
In this paper, a dual-band power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT process is presented. The concept of the optimal matching contour is used in the matching network design to minimize the loss in both operating frequency bands. Thus, this PA achieves good power performance in both frequency bands. The measured results of small-signal gain are 20/12 dB at 28/39 GHz, respectively. The ...
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关键词
Radio frequency,Impedance matching,PHEMTs,Gallium arsenide,Power amplifiers,Dual band,Gain measurement
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